Electronic properties of δ-doped InxGa1-xAs/InAlAsQuantum wells
碩士 === 國立中山大學 === 物理學系研究所 === 93 === We have studied the electronic properties of InxGa1-xAs/ In0.52Al0.48As quantum wells by using Shubnickove-de Hass (SdH) measurement. The indium composition (x) of well layers was varied from 0.5 to 0.56 whit different structures, such as sample A is simply “In0....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37613659494862912249 |