Photoluminescence on Si-Doped PAMBE Grown InN
碩士 === 國立中山大學 === 物理學系研究所 === 93 === In this thesis, we study a series of Si doped InN films. These samples are grown on sapphire (0001) by molecular beam epitaxy (MBE). We have doped Si in InN films successfully. In this experiment, we control Si cell temperature to change carrier concentration of...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/74467644510175292164 |