Characterization of Silicon and Indium Phosphide MOS Structures with Titanium Oxide as Gate Oxides
博士 === 國立中山大學 === 電機工程學系研究所 === 93 === The dielectric constant of poly-crystalline titanium oxide (TiO2) films grown on silicon (Si) by metal organic chemical vapor deposition (MOCVD) is high. The leakage current is also high, which is dominated by the grain boundary and lower barrier height. Silico...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49941567097958706592 |