Orientation control of Lanthanide (Nd,La)-substituted Bismuth Titanate Thin Films for Non-volatile Ferroelectric Random Access Memory Applications

博士 === 國立清華大學 === 材料科學工程學系 === 93 === Abstract Orientation control of lanthanide (Nd, La)-substituted bismuth titanate thin films (Bi4-xLnxTi3O12, BLnT) for nonvolatile ferroelectric random access memory applications was investigated in this research. The BLnT thin films were prepared on Pt/TiOx/S...

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Bibliographic Details
Main Authors: Yi-Chan Chen, 陳頤承
Other Authors: Jon-Yiew Gan
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/ne6p54