Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric
碩士 === 國立清華大學 === 材料科學工程學系 === 93 === In this thesis, using Ga2O3(Gd2O3) as a gate dielectric, we have designed two different structures of depletion-mode(D-mode) GaAs MOSFET's, with GaAs and InGaAs/GaAs as channels. By changing the thickness of oxide, but retaining the same doping concentratio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53131640837334294119 |