RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method
碩士 === 國立清華大學 === 電子工程研究所 === 93 === As the operating frequency rises to the gigahertz range for RF applications, the extrinsic parasitics related to the lossy Si substrate should be included into the MOSFET model physically for achieving accurate and predictive simulation results. However, it is st...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99356152423286533888 |