RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method

• Main Authors: Yen-Tang Huang, 黃雁堂
• Other Authors: Shuo-Hung Hsu
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/99356152423286533888

碩士 === 國立清華大學 === 電子工程研究所 === 93 === As the operating frequency rises to the gigahertz range for RF applications, the extrinsic parasitics related to the lossy Si substrate should be included into the MOSFET model physically for achieving accurate and predictive simulation results. However, it is still not described appropriately in the traditional MOSFET models. Therefore, this work proposes a new approach to extract RF CMOS small-signal model parameters including the substrate parasitic RC network. Based on the newly developed “iteration method”, the model parameters can be extracted directly through the analytical equations without any assumptions. In sum, without any additional optimization procedure, the proposed methodology shows overall satisfactory agreement to the measurement results from 500 MHz to 40 GHz.