RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method
碩士 === 國立清華大學 === 電子工程研究所 === 93 === As the operating frequency rises to the gigahertz range for RF applications, the extrinsic parasitics related to the lossy Si substrate should be included into the MOSFET model physically for achieving accurate and predictive simulation results. However, it is st...
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ndltd-TW-093NTHU54280222016-06-06T04:11:21Z http://ndltd.ncl.edu.tw/handle/99356152423286533888 RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method 射頻金氧半場效電晶體之基板模型建立及參數直接萃取方法 Yen-Tang Huang 黃雁堂 碩士 國立清華大學 電子工程研究所 93 As the operating frequency rises to the gigahertz range for RF applications, the extrinsic parasitics related to the lossy Si substrate should be included into the MOSFET model physically for achieving accurate and predictive simulation results. However, it is still not described appropriately in the traditional MOSFET models. Therefore, this work proposes a new approach to extract RF CMOS small-signal model parameters including the substrate parasitic RC network. Based on the newly developed “iteration method”, the model parameters can be extracted directly through the analytical equations without any assumptions. In sum, without any additional optimization procedure, the proposed methodology shows overall satisfactory agreement to the measurement results from 500 MHz to 40 GHz. Shuo-Hung Hsu 徐碩鴻 2005 學位論文 ; thesis 67 en_US |
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碩士 === 國立清華大學 === 電子工程研究所 === 93 === As the operating frequency rises to the gigahertz range for RF applications, the extrinsic parasitics related to the lossy Si substrate should be included into the MOSFET model physically for achieving accurate and predictive simulation results. However, it is still not described appropriately in the traditional MOSFET models.
Therefore, this work proposes a new approach to extract RF CMOS small-signal model parameters including the substrate parasitic RC network. Based on the newly developed “iteration method”, the model parameters can be extracted directly through the analytical equations without any assumptions.
In sum, without any additional optimization procedure, the proposed methodology shows overall satisfactory agreement to the measurement results from 500 MHz to 40 GHz.
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author2 |
Shuo-Hung Hsu |
author_facet |
Shuo-Hung Hsu Yen-Tang Huang 黃雁堂 |
author |
Yen-Tang Huang 黃雁堂 |
spellingShingle |
Yen-Tang Huang 黃雁堂 RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
author_sort |
Yen-Tang Huang |
title |
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
title_short |
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
title_full |
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
title_fullStr |
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
title_full_unstemmed |
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method |
title_sort |
rf mosfet substrate modeling and a new parameter direct extraction method |
publishDate |
2005 |
url |
http://ndltd.ncl.edu.tw/handle/99356152423286533888 |
work_keys_str_mv |
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