Fabrication and Characterization of Metal (Al)-Oxide-Si Capacitors and Field-effect Transistors Using ZrO2 Gate Oxide
碩士 === 國立清華大學 === 電子工程研究所 === 93 === Al/ZrO2/p-Si metal-insulator-silicon (MIS) capacitors fabricated to characterize the electrical properties of the ZrO2 dielectric. The leakage current density is -8.78×10-2 A/cm2 when the applied electric field is 1MV/cm and the ZrO2 thickness is 14.7 nm, and the...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46689817938782106457 |