The Conduction Mechanism and the Reliability Properties of Metal(Al)/HfO2/Si Capacitors
碩士 === 國立清華大學 === 電子工程研究所 === 93 === Metal-insulator-semiconductor (MIS) capacitors that incorporate HfO2 with physical thickness of 14.0 nm gate dielectrics were fabricated by RF magnetron sputtering. The show that the dominant mechanisms are Schottky emission at high temperatures (>498 K) in lo...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51888394854221236778 |