The Aalysis of Ruggedness on 450V LDMOSFET
碩士 === 國立清華大學 === 電子工程研究所 === 93 === In this thesis, we use TCAD simulation software to design a 450V LDMOSFET. We adjust the parameters to make the device have not only low turn-on resistance but also high breakdown voltages. Through analyzing the device’s currents’ distribution after it has broken...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83096491000896392015 |