The Design of 600V Vertical CoolMOS
碩士 === 國立清華大學 === 工程與系統科學系 === 93 === Conventional VDMOSFET (Vertical Double diffused Metal Oxide Semiconductor Field Effect Transistor) technology for power devices was constrained by the Silicon Limit. This is now improved to have linear relation between on resistance (Ron) and breakdown voltage(B...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54877231589845136957 |