高介電係數材料二氧化鉿之氯氣/氬氣混合電漿蝕刻製程研究
碩士 === 國立清華大學 === 工程與系統科學系 === 93 === The purpose of this research is to study HfO2 and Si etch characteristic in inductivity coupled plasma etcher. Operating parameters are plasma source power, rf peak voltage, Cl2/Ar gas flow rate, and chamber pressure. The influence of those parameters on etch r...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12736233734876801237 |