Electrical and Reliability Characteristics of MOS Devices with HfOxNy as Gate Dielectrics
博士 === 國立清華大學 === 工程與系統科學系 === 93 === The continuous scaling down of gate silicon dioxide thickness in metal-oxide-semiconductor devices achieves continued improvement in integrated circuit performance. However, the accompanying high leakage current of ultrathin silicon oxide is a significant probl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10970025190095958381 |