| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 93 === In this thesis, we deposit niobium oxide (NbxOy) and silicon oxide (SixOy) films by the DC Isolating Oxide Sputter, which the deposition rate can be improved by 3.7 and 4.7 times, respectively, as compared with that by the reactive magnetron sputtering system .That is, we can reduce the deposition time from 12(hrs) to 3.5(hrs) for deposited the NbxOy / SixOy films with 34 layers as compared with the ion source and reactive magnetron sputtering system. In this studies, we also find the changed argon or oxygen flows which is easy to influence sputtering deposition rate and the system stability. In addition to improving sputtering deposition rate and the system stability by the ion source sputtering system, it is easy to control oxidative condition. Meantime, we have investigated multi-layer (34 layers IR cutoff filter) process of DC Ion source systems’ stability and reproducibility. Even thoough, using the ion source can easily control the oxidative condition. It lack for vertical oxidation range as compared with that of the linear ion source. Therefore, we conclude that the linear ion source can improve vertical oxidation range better than the classic-type ion source.
|
|---|
