Characteristics of InGaN/GaN Multiple Quantum Wells with Different Growth Temperatures and Zinc Oxide Thin Films Grown on Sapphire
碩士 === 國立臺灣大學 === 光電工程學研究所 === 93 === In this research, we compare the nanostructure and optical property of four InGaN/GaN multiple quantum well samples with different growth conditions. The quantum wells of three of these samples were grown at different temperatures. The incorporated indium conten...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60034174771703640819 |