High Mobility Strained-Ge Channel Field Effect Transistor
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === A novel structure with a 4-nm-thick Ge layer epitaxially grown on Si substrate (100) was simulated and characterized for applications to high-speed transistors. Raman spectra confirmed the compressive strain (~1.25%) in the Ge channel. The ultra thin Ge (~ 4 nm)...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/87913171355459893365 |