Application of Chemical Oxidation in Nitric Acid and Anodic Oxidation Compensation Techniques on Preparing Nano-Scale High-k HfO2 Gate Dielectrics in MOS Devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === In this work, a method of cost-effective and room temperature process for preparing high-k hafnium oxide gate dielectrics is proposed. The alternative high dielectric constant gate dielectrics had been widely investigated because of their thicker physical thickn...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/69218858466977562847 |