The study of the microstructure of Au(Ge)/GaP wafer after thermal processes
碩士 === 國立臺灣科技大學 === 機械工程系 === 93 === The object of this thesis was to study the metallization layers of Au/AuGe/Au on n-type GaP wafers. The Au/AuGe/Au layers were deposited onto the GaP wafers by a thermal evaporation method. After the evaporation process the GaP wafers were annealed in either trad...
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Format: | Others |
Language: | zh-TW |
Published: |
2005
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Online Access: | http://ndltd.ncl.edu.tw/handle/40152972628136106604 |
Summary: | 碩士 === 國立臺灣科技大學 === 機械工程系 === 93 === The object of this thesis was to study the metallization layers of Au/AuGe/Au on n-type GaP wafers. The Au/AuGe/Au layers were deposited onto the GaP wafers by a thermal evaporation method. After the evaporation process the GaP wafers were annealed in either traditional tube furnace or rapid thermal annealing (RTA) furnace for the alloying processes. We measured the I-V curves of the wafers for the Ohmic contact tests and compared the results with those analyses in the material testing equipments such as XRD, TEM, AES, and EDS to figure out the relationships between Ohmic contact and the changes in the microstructure of the Au/GaP interface.
The XRD analysis in the Au/AuGe/Au layers on the GaP wafers indicated that the metal layers are mixed with Au and γ-AuGe phases in the as-deposited condition and RTA processes at 350 and 400 oC. The metal layers are Au and -AuGa phases in the traditional annealing process at 485 and 520 oC and RTA processes at 450 and 500 oC.
We observed the sample annealed in the traditional tube furnace at 520 oC for 15 minutes by using lattice image methods to identify the phase of GeP compound. We observed the sample after annealing in the process of the traditional tube furnace at 520 oC for 15 minutes form the GeP compound belongs to face-centered cubic in the Bravais lattices. The lattice constant of the GeP is about a=5.463Å for comparing it with that of GaP. The lattice of the GeP compound has cubic to cubic orientation relationships with that of GaP from the TEM observation.
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