Ⅰ.An effective one-trap-level TCAD model for proton-induced semi-insulating substrates rendered by the general SOC integration platform: Particle-Beam Stand (PBS)Ⅱ.A preliminary research on the possible physical mechanism of the Kirlian Photography

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 93 === Ⅰ.A π technology (PEI = particle-enhanced isolation) had previously been proposed to employ energetic proton beams on the already-manufactured mixed-mode (analog-digital) IC wafers (prior to packaging) for the suppression of undesirable substrate coupling. R...

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Bibliographic Details
Main Authors: Cheng-Hsing Hsu, 許正興
Other Authors: 廖重賓
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/tg4ng5