Characterization of ZnSSeTe Photodetectors Grown by MBE
碩士 === 南台科技大學 === 電機工程系 === 93 === II-VI ZnSSeTe PD were grown by a RIBER 32P MBE system on p-GaAs substrate. The optical characteristics of ZnSSeTe epitaxial layers were examined by using photoluminescence (PL) excited by a 325nm He-Cd laser. In addition, reflection spectra was measured by using Tu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05052792637610082858 |