| Summary: | 碩士 === 大同大學 === 材料工程學系(所) === 93 === Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor devices. Because of its diffraction limit, conventional optical or ultraviolet photolithography is becoming increasingly inadequate. In order to continuous reducing the feature size to nanometer scale, different forms of radiation is developed, for instance, extreme UV, x-ray, electron beams, and ion beams. Electron beam lithography is one of the best methods to produce nanometer-scale pattern by its superior high resolution and focus ability.
In this paper, first we made the electron beam direct write test of the resist PMMA and ZEP520.Then we used electron beam lithography – proximity effect to fabricate the nano-lines on the resist coated on the quartz, then etching by ICP to get the near-field mask. By KrF(248nm)excimer laser contact mode exposed（near-field lithography）, we created the extremely fine patterns(< 100nm)across a surface coved with resist film.
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