Study of Reliability in the Local Strained n-channel MOSFET by Different Thickness of Poly-Si Gate and Nitride Capping Layer
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 93 === In this study, a local strained n-channel MOSFET has been fabricated by utilizing a heavy mechanical stress SiNx-capping layer, and further improves the carrier mobility to achieve the purpose of high operation speed. We investigate the local strained effect...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55965071158238051577 |