氮化矽製程溫度及其厚度參數對SONOS元件性能影響之研究
碩士 === 國防大學中正理工學院 === 應用物理研究所 === 94 === This thesis focused on deposition temperature and thickness variation of the nitride layer in SONOS flash memory device. Four nitride layers with the same thicknesses were deposited by LPCVD at 600oC, 700oC, 780oC and 830oC respectively. Besides, 3nm、5nm and...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10779054636423091810 |