the optical properties of the nitride layer of the flash devices.
碩士 === 國防大學中正理工學院 === 應用物理研究所 === 94 === In this paper, we used several methods, including photoluminescence (PL), Raman spectroscopy and Fourier transform infrared spectroscopy to study the optical properties of the nitride layer of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices. The SONOS dev...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35052109494168280399 |