Improve the Luminescence Efficiency of Si Doped Light-Emitting Diode with an AlGaN Electron-Blocking Layer
碩士 === 長庚大學 === 光電工程研究所 === 94 === This thesis presents the study of the improving the luminescence efficiency of Si doped light emitter diode with AlGaN electron blocking layer. Si doping which is in the barrier of multi-quantum well can fill defect, besides reducing operating voltage of device. Be...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69051646596827140879 |