Study of indium diffusion throughpolycrystalline silicon and silicon dioxide
碩士 === 長庚大學 === 電子工程研究所 === 94 === As semiconductor technology is scaling down to deep sub-micron, it becomes increasingly difficult to control the leakage current of transistors. Indium gives a steeper profile to suppress short channel effects of metal oxide semiconductor transistors (MOSFET). Ext...
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98793178031026402251 |