The electrical characteristics and physical properties of lanthanum oxide and erbium oxide gate dielectrics for different metal gates
碩士 === 長庚大學 === 電子工程研究所 === 94 === In this thesis, we have investigated properties of insulating lanthanum oxide and erbium oxide films in connection with the replacement of SiO2 gate dielectrics in new generation of CMOS devices. The La2O3 and Er2O3 layers were grown using RF-sputtering with Al and...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73487172183615497475 |