Investigation of Arsenic Dose Loss in Silicon on Insulator
碩士 === 長庚大學 === 電子工程研究所 === 94 === Impurity distribution inside semiconductor devices is important. In this study, 150Å oxide was growth on bulk silicon and silicon on insulator (SOI) wafers. Arsenic ions were implanted into wafers at 80keV with a dose of 5×1014 /cm2. Subsequent annealing was per...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33383544833110443935 |