Investigation on Properties of PECVD Carbon Doped Silicon Oxide for Different Deposition Condition

碩士 === 正修科技大學 === 電子工程研究所 === 94 === The objective of this study is to investigate and develop a suitable low dielectric material (Low-k) and its integration for the application of the deep submicron ultra-large scale integrated circuits (ULSI). The glass composite thin films were deposited on silic...

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Bibliographic Details
Main Authors: Ying-Shu Li, 李盈樹
Other Authors: 王納富
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/56639265581124332002