Investigation on Properties of PECVD Carbon Doped Silicon Oxide for Different Deposition Condition

• Main Authors: Ying-Shu Li, 李盈樹
• Other Authors: 王納富
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/56639265581124332002

碩士 === 正修科技大學 === 電子工程研究所 === 94 === The objective of this study is to investigate and develop a suitable low dielectric material (Low-k) and its integration for the application of the deep submicron ultra-large scale integrated circuits (ULSI). The glass composite thin films were deposited on silicon substrates by plasma enhanced chemical vapor deposition method (PECVD). The physical and chemical characteristics of the deposited films were investigated by varying the deposition pressure and the trimethylsilane ratio. In the part of physical characteristics, the thickness and refractive index of the deposited films were measured by spectroscopic Ellipsometery. The capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out to investigate the permittivity, leakage current density, and breakdown field strength of the deposited films. In the chemical characteristics part, the bonding configuration. The results exhibit that the new Low-k material, appears to be a promising low dielectric constant material for IMD application beyond the 65 nm technological node.