Influence of Channel Thickness on Electrical Characteristics for SiGe PMOSFET
碩士 === 正修科技大學 === 電子工程研究所 === 94 === In this thesis, p-type Si/SiGe metal-oxide-semiconductor field effect transistor (PMOSFET) with different SiGe thickness have been proposed and fabricated. The influence of SiGe-layer thickness on the electrical performances of SiGe PMOSFET has been investigated....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60392570943046380458 |