Characteristic Study of MIS capacitors Using AlN Film as Dielectric
碩士 === 正修科技大學 === 機電工程研究所 === 94 === The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material. AlN film has a lot of advantages, such as high dielectric constant...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12570133076904755520 |