Characteristic Study of MIS capacitors Using AlN Film as Dielectric
碩士 === 正修科技大學 === 機電工程研究所 === 94 === The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material. AlN film has a lot of advantages, such as high dielectric constant...
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ndltd-TW-094CSU006570212015-10-28T04:07:08Z http://ndltd.ncl.edu.tw/handle/12570133076904755520 Characteristic Study of MIS capacitors Using AlN Film as Dielectric 以氮化鋁作為MIS電容介電層之研製與特性分析 Yu-Ming Yeh 葉祐名 碩士 正修科技大學 機電工程研究所 94 The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material. AlN film has a lot of advantages, such as high dielectric constant (k=8~10), low leakage current density and larger heat of formation energy than that of SiO2. Therefore, AlN film extremely has the potential application in dielectrics of the Metal Oxide Semiconductor Field Effect Transistor(MOSFET) and Dynamic Random Access Memory(DRAM). In this work, AlN film were deposited onto p-type Si(100) wafer by reactive dc magnetron sputtering with fixed mixture of N2 and Ar gas at room temperature. Deposition was accomplished with increasing dc power supply from 50W to 300W. The highest dielectric constant of AlN films was 12.82 with the equivalent oxide thickness of 12.77 nm. The leakage current density was 5.88×10-8 A/cm2 while the electric field was at 1MV/cm. More detail structure morphology of AlN films can be identifity by TEM (Transmission Electron Microscope) image.A narrow width (10Å) of the interface existed detectably between AlN film and Si substrate. The preliminary results showed that the AlN film is a potential alternative for the gate dielectrics of Si-base MOSFET. However, the trapped charge density needs to be reduced and controlled to promote the quality of AlN film. 翁敏航 郭柏立 2006 學位論文 ; thesis 111 zh-TW |
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碩士 === 正修科技大學 === 機電工程研究所 === 94 === The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material.
AlN film has a lot of advantages, such as high dielectric constant (k=8~10), low leakage current density and larger heat of formation energy than that of SiO2. Therefore, AlN film extremely has the potential application in dielectrics of the Metal Oxide Semiconductor Field Effect Transistor(MOSFET) and Dynamic Random Access Memory(DRAM).
In this work, AlN film were deposited onto p-type Si(100) wafer by reactive dc magnetron sputtering with fixed mixture of N2 and Ar gas at room temperature. Deposition was accomplished with increasing dc power supply from 50W to 300W. The highest dielectric constant of AlN films was 12.82 with the equivalent oxide thickness of 12.77 nm. The leakage current density was 5.88×10-8 A/cm2 while the electric field was at 1MV/cm. More detail structure morphology of AlN films can be identifity by TEM (Transmission Electron Microscope) image.A narrow width (10Å) of the interface existed detectably between AlN film and Si substrate. The preliminary results showed that the AlN film is a potential alternative for the gate dielectrics of Si-base MOSFET. However, the trapped charge density needs to be reduced and controlled to promote the quality of AlN film.
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author2 |
翁敏航 |
author_facet |
翁敏航 Yu-Ming Yeh 葉祐名 |
author |
Yu-Ming Yeh 葉祐名 |
spellingShingle |
Yu-Ming Yeh 葉祐名 Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
author_sort |
Yu-Ming Yeh |
title |
Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
title_short |
Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
title_full |
Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
title_fullStr |
Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
title_full_unstemmed |
Characteristic Study of MIS capacitors Using AlN Film as Dielectric |
title_sort |
characteristic study of mis capacitors using aln film as dielectric |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/12570133076904755520 |
work_keys_str_mv |
AT yumingyeh characteristicstudyofmiscapacitorsusingalnfilmasdielectric AT yèyòumíng characteristicstudyofmiscapacitorsusingalnfilmasdielectric AT yumingyeh yǐdànhuàlǚzuòwèimisdiànróngjièdiàncéngzhīyánzhìyǔtèxìngfēnxī AT yèyòumíng yǐdànhuàlǚzuòwèimisdiànróngjièdiàncéngzhīyánzhìyǔtèxìngfēnxī |
_version_ |
1718112961947500544 |