Characteristic Study of MIS capacitors Using AlN Film as Dielectric

• Main Authors: Yu-Ming Yeh, 葉祐名
• Other Authors: 翁敏航
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/12570133076904755520

碩士 === 正修科技大學 === 機電工程研究所 === 94 === The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material. AlN film has a lot of advantages, such as high dielectric constant (k=8~10), low leakage current density and larger heat of formation energy than that of SiO2. Therefore, AlN film extremely has the potential application in dielectrics of the Metal Oxide Semiconductor Field Effect Transistor(MOSFET) and Dynamic Random Access Memory(DRAM). In this work, AlN film were deposited onto p-type Si(100) wafer by reactive dc magnetron sputtering with fixed mixture of N2 and Ar gas at room temperature. Deposition was accomplished with increasing dc power supply from 50W to 300W. The highest dielectric constant of AlN films was 12.82 with the equivalent oxide thickness of 12.77 nm. The leakage current density was 5.88×10-8 A/cm2 while the electric field was at 1MV/cm. More detail structure morphology of AlN films can be identifity by TEM (Transmission Electron Microscope) image.A narrow width (10Å) of the interface existed detectably between AlN film and Si substrate. The preliminary results showed that the AlN film is a potential alternative for the gate dielectrics of Si-base MOSFET. However, the trapped charge density needs to be reduced and controlled to promote the quality of AlN film.