Uniformity Improvement of III-V Semiconductor Backside Via Hole Plating by Using Electron Pulse Technique
碩士 === 建國科技大學 === 電機工程系暨研究所 === 94 === The trend of shrinking device size and maintaining feature integrated-functions give the manufacturing process towards more complicated and the accompanied heat dissipation also become a challenge. In common practice gold metal is electro-plated on the backside...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/45493473694897269846 |