Influence of ZnSe partial capping layer on ripening effect of CdSe quantum dots
碩士 === 中原大學 === 應用物理研究所 === 94 === We investigated the ripening properties of self-assembled 4.0 mono-layers (MLs) CdSe quantum dots (QDs) with ZnSe partial-capping and subsequent anneal of 2 minutes on 50 nm ZnSe buffer layer grown on GaAs (001) substrates by molecular beam epitaxy. Atomic force mi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48233418013828792298 |