Study of Silicon Dioxide Grown onto SiGe Film by Using Liquid Phase Deposition
碩士 === 大葉大學 === 電機工程學系碩士班 === 94 === Silicon dioxide layer has been grown onto SiGe thin films by using liquid-phase-deposition (LPD) technique for the first time. In this work, different growth temperature and concentration of boric acid (H3BO3) were taken to investigate the performance of silicon...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63698330472259635400 |