Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors

Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors

碩士 === 逢甲大學 === 產業研發碩士班 === 94 === RTA( Rapid Thermal Annealing) Technology has been applied to the process in VLSI, extensive with thermal budget, because RTA technology can insert the advantage of bringing the environment that the chip is in up to more than 1000 degrees Centigrade within short tim...

Full description

Bibliographic Details
Main Authors: Kuo-Wei Hung, 洪國瑋
Other Authors: Wen-Luh Yang
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/86582060788486740155
id ndltd-TW-094FCU05334004
record_format oai_dc
spelling ndltd-TW-094FCU053340042015-12-11T04:04:18Z http://ndltd.ncl.edu.tw/handle/86582060788486740155 Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors 利用氧化前處理及電漿處理改善鎳鈦酸高介電薄膜應用在MIM電容 Kuo-Wei Hung 洪國瑋 碩士 逢甲大學 產業研發碩士班 94 RTA( Rapid Thermal Annealing) Technology has been applied to the process in VLSI, extensive with thermal budget, because RTA technology can insert the advantage of bringing the environment that the chip is in up to more than 1000 degrees Centigrade within short time, have already been adopted extensively gradually. In this work, the first oxidization of nickel/titanium film is completed by RTA. Then,the second oxidization at 450℃ using furnace. Finally, NiTiO3 film is melted by nitrogen treatment at 450 ℃. We find that it will improve property by directly oxidization after pre-oxidation and post-oxidation treatment. Wen-Luh Yang 楊文祿 2006 學位論文 ; thesis 75 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 逢甲大學 === 產業研發碩士班 === 94 === RTA( Rapid Thermal Annealing) Technology has been applied to the process in VLSI, extensive with thermal budget, because RTA technology can insert the advantage of bringing the environment that the chip is in up to more than 1000 degrees Centigrade within short time, have already been adopted extensively gradually. In this work, the first oxidization of nickel/titanium film is completed by RTA. Then,the second oxidization at 450℃ using furnace. Finally, NiTiO3 film is melted by nitrogen treatment at 450 ℃. We find that it will improve property by directly oxidization after pre-oxidation and post-oxidation treatment.
author2 Wen-Luh Yang
author_facet Wen-Luh Yang
Kuo-Wei Hung
洪國瑋
author Kuo-Wei Hung
洪國瑋
spellingShingle Kuo-Wei Hung
洪國瑋
Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
author_sort Kuo-Wei Hung
title Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
title_short Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
title_full Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
title_fullStr Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
title_full_unstemmed Improving the Electrical Characteristics of NixTi1-xO High K Dielectric by Plasma Treatment and Pre-oxidation Treatment for MIM Capacitors
title_sort improving the electrical characteristics of nixti1-xo high k dielectric by plasma treatment and pre-oxidation treatment for mim capacitors
publishDate 2006
url http://ndltd.ncl.edu.tw/handle/86582060788486740155
work_keys_str_mv AT kuoweihung improvingtheelectricalcharacteristicsofnixti1xohighkdielectricbyplasmatreatmentandpreoxidationtreatmentformimcapacitors
AT hóngguówěi improvingtheelectricalcharacteristicsofnixti1xohighkdielectricbyplasmatreatmentandpreoxidationtreatmentformimcapacitors
AT kuoweihung lìyòngyǎnghuàqiánchùlǐjídiànjiāngchùlǐgǎishànniètàisuāngāojièdiànbáomóyīngyòngzàimimdiànróng
AT hóngguówěi lìyòngyǎnghuàqiánchùlǐjídiànjiāngchùlǐgǎishànniètàisuāngāojièdiànbáomóyīngyòngzàimimdiànróng
_version_ 1718147520842956800

Similar Items