Suppressing the Boron Penetration on Poly-Si/Poly-Si0.82Ge0.18 Gated Structure by In-Situ Boron Activation Process
碩士 === 逢甲大學 === 電子工程所 === 94 === In this thesis, the authors took three parts to study. First, in order to promote the thermal stability of NiSi , Poly-Si/Poly-SiGe gated structure was took. Secondly , for SiGe has higher boron activation rate , the implantation BF2 process was followed by Silic...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38364744518467097403 |