Transport Properties of Double SiNx/Si/SiNx Nanopillars Transistor

碩士 === 義守大學 === 電子工程學系碩士班 === 94 === We report an investigation on quantum interference of charge excitation in double-dot nanopillar transistor. Electrical transport measurements on the two closed coupled silicon dots with distinct critical length of 1.5nm and 3nm,for the first time, show full size...

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Bibliographic Details
Main Authors: Hsien-Hsun Yang, 楊弦勳
Other Authors: Yue-Min Wan
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/04066249181417679320