Transport Properties of Double SiNx/Si/SiNx Nanopillars Transistor
碩士 === 義守大學 === 電子工程學系碩士班 === 94 === We report an investigation on quantum interference of charge excitation in double-dot nanopillar transistor. Electrical transport measurements on the two closed coupled silicon dots with distinct critical length of 1.5nm and 3nm,for the first time, show full size...
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| Format: | Others |
| Language: | zh-TW |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04066249181417679320 |
| Summary: | 碩士 === 義守大學 === 電子工程學系碩士班 === 94 === We report an investigation on quantum interference of charge excitation in double-dot nanopillar transistor. Electrical transport measurements on the two closed coupled silicon dots with distinct critical length of 1.5nm and 3nm,for the first time, show full size beats in current-voltage (I-V) characteristics at 300K.Analysis of data based on electron charging suggests that the interference occurs at the state of n=1.We find that at large bias the excitation rises to a group of mixing states of n=2 and n=3.We propose an electron-mechanical coupling model to explain the results.
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