Investigation of Characterization of Carbon-Doped p-Type GaAs Grown by MOCVD using CBr4
碩士 === 義守大學 === 電子工程學系碩士班 === 94 === Carbon doping in GaAs epilayers grown by metalorganic chemical vapor deposition (MOCVD) using CBr4 was successfully obtained . The growth rate decreased as CBr4 increased due to the etching effect of HBr caused by Br radicals. The growth rate increased while V/II...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27344421864272141898 |