Dielectric Properties and Microstructure of ZrO2 Thin films Prepared by RF Magnetron Sputtering
碩士 === 國立中興大學 === 材料工程學系所 === 94 === Abstract With reducing complementary metal oxide semiconductor (COMS) device feature sizes to the sub-0.1μm, the gate dielectrics with a high permittivity have been recently reported by improving gate leakage current characteristics. Among the candidate material...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40068878923191574800 |