Fabricated the High Brighness Light Emitting Diodes Through the Photoelectrochemical Wet Etching.
碩士 === 國立中興大學 === 材料工程學系所 === 94 === The higher light extraction efficiency of InGaN-based light emitting diodes (LED) has fabricated and study in this thesis. The fabricated InGaN-based LED wafers are treated through a photoelectrochemical (PEC) wet etching process using the Hg lamp illumination an...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75813571565084019574 |