First-Principles Calculations of Interfacial Oxide Layer and Its Properties for Bonded GaAs Wafers
碩士 === 中興大學 === 材料工程學系所 === 94 === There are many investigations for direct wafer bonding, which play an important role in the optoelectronic device filed. However, the interface can have serious influence in the electrical performance. Therefore, we study the atomic structure and electrical propert...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70945860345933372879 |