Study on the Novel High Performance T-Shaped-Gated Poly-Si TFTs
碩士 === 國立中興大學 === 電機工程學系所 === 94 === In this thesis, we have successfully fabricated T-Shaped-Gated polycrystalline silicon thin film transistors (hereafter is called T-Gate TFTs) by using selective side- etching process. In particular, the vacuum gaps (the lowest dielectric constant material) are i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52592918297716802429 |