Fabrication and Characterization of Patterned Sapphire Substrates Using a High-Density-Plasma Etcher
碩士 === 國立中興大學 === 精密工程學系所 === 94 === Group III nitride semiconductors have recently attracted much attentions for their versatile applications as high-brightness light emitting diodes (LEDs) which can be used in full-color displays, full-color indicators and light sources for lamps. Conventional GaN...
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Format: | Others |
Language: | zh-TW |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/03491308954174240666 |