Improvements in Light Extraction Efficiency of GaN Light-Emitting Diodes Using Various Chip Processes
碩士 === 中興大學 === 精密工程學系所 === 94 === GaN-related alloy semiconductors with wide band gap ranging from 3.4 to 6.2 eV are the focus of current research for blue and ultraviolet emitters. In this thesis, various chip processes, such as bottom reflectors, antireflection (AR) coatings and surface texturing...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66665327508469915961 |