Study of GaN Crystals Growth on Patterned Sapphire Substrate by Hydride Vapor Phase Epitaxy Method
博士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 94 === In this dissertation, the hydride vapor phase epitaxy (HVPE) process and epitaxial lateral overgrowth (ELO) method were adopted to deposit the GaN thick films ( > 100 μm ) on patterned sapphire substrate (PSS) with control the growth temperatures in the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44277636353281532246 |