The study of AlInGaN MSM photodetectors and InGaN/GaN MQW optical devices
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === Abstract In this thesis, we fabricated Metal-Semiconductor-Metal photodetectors with quaternary AlInGaN as the active layer. At first, we will investigate the effect of thermal annealing on the fabricated devices by the annealing treatment. With a 5V bia...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23665569394581152279 |