A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGaAsN/GaAs quantum...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08327497435796958237 |